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Volumn 118, Issue 1-4, 1996, Pages 613-616
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Ion-beam analysis of silicon carbide
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS FILMS;
ANNEALING;
BACKSCATTERING;
CHEMICAL VAPOR DEPOSITION;
FILMS;
HYDROGEN;
ION BEAMS;
METHANE;
PLASMA APPLICATIONS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
STOICHIOMETRY;
SUBSTRATES;
CHANNEL;
CHANNELING;
ION BEAM ANALYSIS;
STOICHIOMETRIC RATIO;
SILICON CARBIDE;
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EID: 0030565095
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/0168-583X(95)01462-4 Document Type: Article |
Times cited : (7)
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References (12)
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