Model predictions for the NIEL of high energy pions in Si and GaAs

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 394, Issue 1-2, 1997, Pages 232-234

  Lazanu, S ^a   Lazanu, I ^b   Biggeri, U ^c   Borchi, E ^c   Bruzzi, M ^c  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF BUCHAREST   (Romania)

^c INFN SEZIONE DI FIRENZE   (Italy)

Author keywords

Blocking; Energy loss; Radiation effects on specific materials; Semiconductors channelling phenomena

Indexed keywords

ELEMENTARY PARTICLES; ENERGY DISSIPATION; HIGH ENERGY PHYSICS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

NONIONIZING ENERGY LOSSES; PIONS;

SEMICONDUCTOR MATERIALS;

EID: 0031191660     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00669-4     Document Type: Article

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