Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1595-1601

  Chan, C H ^a   Chen, Y F ^a,c   Chen, M C ^a   Lin, H H ^a   Jan, G J ^a   Chen, Y H ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c Graduate Institute of Electro Optical Engineering   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; ENERGY GAP; EXCITONS; MOLECULAR BEAM EPITAXY; NUMERICAL METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

FRANZ-KELDYSH OSCILLATIONS; GAS SOURCE MOLECULAR BEAM EPITAXY; PHOTOREFLECTANCE SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0032132423     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368229     Document Type: Article

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