Improved flash cell performance by N2O annealing of interpoly oxide

IEEE Electron Device Letters

Volumn 18, Issue 7, 1997, Pages 343-345

  Jong, Fuh Cheng ^a,b   Huang, Tiao Yuan ^a,c   Chao, Tien Sheng ^c   Lin, Horng Chih ^c   Leu, Len Yi ^b   Young, Konrad ^b   Lin, Chen Hsi ^b   Chiu, Kuang Y ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DEPOSITION; INTEGRATED CIRCUIT MANUFACTURE; NITROGEN OXIDES; OXIDATION; SILICON NITRIDE; SILICON WAFERS; TRANSCONDUCTANCE;

FLASH CELLS;

SEMICONDUCTOR STORAGE;

EID: 0031186107     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.596931     Document Type: Article

References (9)

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