Threshold current, differential gain, and relaxation resonance frequency of 1.55-μm bulk and MOW DFB laser diodes

IEEE Journal of Quantum Electronics

Volumn 34, Issue 7, 1998, Pages 1231-1239

  Kakimoto, Syouichi ^a   Watanabe, Hitoshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Distributed feedback lasers; Laser resonator; Optical communication; Quantum well lasers; Semiconductor lasers

Indexed keywords

GAIN MEASUREMENT; LASER RESONATORS; NATURAL FREQUENCIES; OPTICAL COMMUNICATION; QUANTUM WELL LASERS; SEMICONDUCTOR LASERS;

DIFFERENTIAL GAIN; RELAXATION RESONANCE FREQUENCY; THRESHOLD CURRENT;

DISTRIBUTED FEEDBACK LASERS;

EID: 0032122053     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.687867     Document Type: Article

References (37)

1. J. E. Bowers, "High speed semiconductor laser design and performance," Solid State Electron., vol. 30, pp. 1-11, 1987.
2. K. Y. Lau, N. Bar-Chaim, and I. Uray, "Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequency." Appl. Phys. Lett., vol. 43, pp. 1-3, 1983.
3. R. S. Tuker, C. Lin, C. A. Burrus, P. Besomi, and R. J. Nelson, "High-frequency small-signal modulation characteristics of short-cavity InGaAsP lasers," Electron. Lett., vol 20, pp. 393-394, 1984.
4. K. Y. Lau, "Direct modulation of semiconductor lasers at f > 10 GHz by low-temperature operation," Appl. Phys. Lett., vol. 44, pp. 273-275, 1984.
5. K. Y. Lau, N. Bar-Chaim, and I. Ury. "II-GHz direct modulation bandwidth GaAlAs window laser on semi-insulating substrate operating at room temperature," Appl. Phys. Lett., vol 45, pp 316-318, 1984.
6. C. B. Su, V. Lanzisera, W. Powazinik, E Meland, R Olshansky, and R. B. Rauer, "12.5-GHz direct modulation bandwidth of Vapor phase regrown 1.3 μm InGaAsP buried heterostructure lasers," Appl. Phys. Lett., vol. 46, pp 344-346, 1985.
7. C. B. Su, V. Lanzisera, R. Olshansky, W. Powazinik, E. Meland, J. Schlafer, and R. B. Lauer, "15 GHz direct modulation bandwidth of vapor-phase regrown 1.3 μm InGaAsP buried-heterostructure lasers under CW operation at room temperature." Electron. Lett., vol. 21, pp. 577-579, 1985.
8. J. E. Bowers, B. R. Hemenway, T. J. Bridges, E. G. Burkhardt, and D. P. Wilt. "26.5 GHz bandwidth InGaAsP lasers with optical confinement," Electron. Lett., vol. 21, pp. 1090-1091, 1985.
9. J. E. Bowers, "Millimeter-wave response InGaAsP lasers," Electron. Lett., vol. 21, pp. 1195-1197, 1985.
10. R. Olshansky, W. Powazinik, P. Hill, V. Lanziser, and R. B. Lauer, "InGaAsP buried heterostructure laser with 22 GHz bandwidth and high modulation efficiency." Electron. Lett., vol. 23, pp. 839-841, 1987.
11. Y. Arakawa and A. Yariv. "Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum lasers." IEEE J. Quantum Electron., vol. QE-21, pp. 1666-1674, 1985.
12. K. Uomi, N. Chione, T. Ohhashi, and T. Kajimura, "High relaxation oscillation frequency (beyond 10 GHz) of GaAlAs multiquantum well lasers." Jpn. J. Appl. Phys., vol. 24, pp. L539-L541, 1985.
13. T. Yuasa, T. Yamada, K. Asakawa, and M. Ishii. "Very high relaxation oscillation frequency in dry-etched short cavity GaAs/AlGaAs multiquantum well laser." Appl. Phys. Lett., vol. 50, pp. 1122-1124, 1987.
14. K. Uomi, T. Mishima, and N. Chione, "Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/AlGaAs multiple quantum well lasers." Appl. Phys. Lett. vol. 51, pp. 78-80, 1987.
15. A. Takemoto, Y. Sakakibara, Y. Nakajima, M. Fujiwara, S. Kakimoto, H. Namizaki, and W. Susaki, "1.3 μm InGaAsP/InP distributed-feedback p-substrate partially inverted buried heterostructure laser diodes," Electron. Lett., vol. 23, pp. 546-547, 1987.
16. A. Takemoto, Y. Ohkura, Y. Kawama, Y. Nakajima, T. Kimura. N. Yoshida, S. Kakimoto, and W. Susaki, "1.3-μm distributed feedback laser diode with a grating accurately controlled by a new fabrication technique," J. Lightwave Technol., vol. 7, pp. 2072-2077, 1989.
17. H. Kogelnik and C. V. Shank, "Coupled-wave theory of distributed feedback lasers" J. Appl. Phys., vol. 43, pp. 2327-2335, 1972.
18. K. Utaka, S. Akiba, K. Sakaki and Y. Matsushima, "λ/4-shifted InGaAsP DFB lasers by simultaneous holographic exposure of positive and negative photoresists," Electron. Lett., vol. 20, pp. 1008-1010, 1984.
19. S. Koentjorp, N. Eda, K. Furuya, and Y. Suematsu, "1.5 μm Phaseshifted DFB laser by EBX and mass-transport technique." Electron. Latt., vol. 21, pp. 525-527, 1985.
20. M. Okai, S. Tsuji, M. Hirao, and Matsushima, "New high resolution positive and negative photoresist method for λ/4-shifted DFB lasers," Electron. Lett., vol. 23, pp. 370-371, 1987.
21. H. Soda, K. Wakao, H. Sudo, T. Tanahashi, and H. Imai, "GaInAsP/InP phase-adjusted distributed feedback lasers with a step like nonuniform stripe width structure," Electron. Lett., vol. 20, pp. 1016-1018, 1984.
22. B. Broberg, S. Kontjiro, K. Furuya, and Y. Suematsu, "1.54 mm InGaAsP/InP distritated feedback lasers with mass-transport windows," Appl. Phys. Lett., vol. 47, pp. 4-6, 1985.
23. M. Okai, N. Chinone, H. Taira, and T. Harada, "Corrugation-pitchmodulated phase-shift DFB laser," IEEE Photon. Technol. Lett., vol. 1, pp. 200-201, 1989.
24. K. Kobayashi and I. Mito, "High output-power sigle-longitudinalmade semiconductor laser diodes," J. Lightwave Technol., vol. LT-3, pp. 1202-1210, 1985.
25. W. Streifer, R. Burnham, and D. R. Scifres. "Effect of external reflector on longitudinal mode of distributed feedback lasers, IEEE J. Quantum Electron., vol. QE-11, pp. 154-162, 1972.
26. S. Kakimoto and H. Watanabe, "Absorption loss coefficient of the active layer in the 1.48 μm bulk and MQW lasers, " IEEE J. Quantum Electron., vol. 34, pp. 110-112. Jan. 1998.
27. H. C. Casey, Jr., and P. L. Carter, "Variation of intervalence band absorption with hole concentration in p-type InP," Appl. Phys. Lett., Vol. 44, pp. 82-83, 1984.
28. G. Fuchs, J. Horer, A. Hangleiter, V. Harle, and F. Scholz. "Intervalence band absorption in strained and unstrained InGaAsP multiple quantum well structure," Appl. Phys. Lett., vol. 60, pp 231-233, 1992.
29. M. Asada and Y. Suematsu. "Density matrix theory of semiconductor lasers with relaxation broading mode-gain and gain-suppression in semiconductor lasers," IEEE J. Quantum Electron., vol. QE-21. pp. 434-442, 1985.
30. M. Asada, A. Kameyama, and Y Suematsu. "Gain and intervalence band absorption in quantum-well lasers" IEEE J. Quantum Electron., vol. QE-20, pp. 745-753, 1984.
31. S. Kakimoto, A. Takemoto, Y. Sakakibara, Y. Nakajima, and M. Fujiwara, "Threshold currents of 1.2-1.55μm p-substrate buried crescent laser diodes," IEEE J. Quantum Electron., vol. 28, pp. 1631-1635, 1992.
32. K. Petermann, Laser Diode Modulation and Noise, Dordrecht, The Netherlands: Kluwer, 1988.
33. R. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geel, and J. E. Bowers, "High speed quantum-well lasers and carrier transport effects." IEEE J. Quantum Electron., vol. 28, pp. 1990-2008, 1992
34. I. Suemune, L. A. Coldren, M. Yamanishi, and Y. Kan, "Extremely wide modulation bandwidth in a low threshold current strained quantum well lasers." Appl. Phys. Lett., vol. 53, pp. 1378-1380, 1988.
35. S. Murata, K. Naniwa, J. Shimizu, M. Nido, A. Tomita. and A. Suzuki, "High-frequency modulation characteristics in 1.5 μm compressively strained multi-quantum well lasers with large number of wells." Electron. Lett., vol. 28, pp. 1456-1457, 1992.
36. P. A. Morton, R. A. Logan, T. Tanbun-Ek, P. F. Sciortiino, Jr., A. M. Sergent, R. K. Montgomery, and B. T. Lee, "25 GHz bandwidth 1.55 μm GaInAsP multi-quantum well lasers." Electron. Lett., vol. 28, pp. 2156-2157, 1992.
37. H. Lu, G. P. Li, and T. Makini. "High-speed performance of partly gain-coupled 1.55 μm strained-layer multi-quantum-well DFB lasers." IEEE Photon. Technol. Lett., vol. 5, pp. 861-863, 1993.