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Volumn 34, Issue 1, 1998, Pages 110-112

Absorption loss coefficient of the active layer for 1.48-μm bulk and MQW lasers

Author keywords

Laser resonators; Optical communication; Optical fiber amplifiers; Quantum well lasers; Semiconductor lasers

Indexed keywords

FIBER LASERS; HETEROJUNCTIONS; LASER RESONATORS; LIQUID PHASE EPITAXY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

EID: 0031672415     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.655014     Document Type: Article
Times cited : (9)

References (12)
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  • 5
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    • 1.48 μm high power InGaAs/InGaAsP MQW-LD's for Er-doped fiber amplifier
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    • K. Y. Liou, W. T. Tsang, F. S. Choa, E. C. Burrows, G. Raybon, and C. A. Burrus, "Low-threshold and high-temperature operation of 1.55 μm self-aligned ridge-waveguide multiple-quantum-well lasers grown by chemical-beam epitaxy," Appl. Phys. Lett., vol. 59, pp. 3381-3383, 1991.
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    • 1.48 μm high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes
    • T. Namegaya, R. Katsumi, N. Iwai, S. Namiki, A. Kasukawa, Y. Hiratani, and T. Kikuta, "1.48 μm high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes," IEEE J. Quantum Electron., vol. 29, pp. 1924-1931, 1993.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.