Growth of 4H-SiC from liquid phase

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 329-332

  Syvajarvi M ^a   Yakimova, R ^a,b   Ivanov, I G ^a,c   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Outokumpu Semitronic AB   (Sweden)

^c UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

4H Silicon Carbide; Growth Rate; Liquid Phase Epitaxy; Morphology

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH FROM MELT; LIQUID PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

LIQUID ZONE STABILITY; POLYTYPE REPRODUCIBILITY;

SILICON CARBIDE;

EID: 0031118505     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)02001-6     Document Type: Article

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