AES analysis of silicon nitride formation by 10 keV N+ and N+2 ion implantation

Vacuum

Volumn 47, Issue 12, 1996, Pages 1495-1499

  Pan, J S ^a   Wee, A T S ^a   Huan, C H A ^a   Tan, H S ^a   Tan, K L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; NITROGEN; SATURATION (MATERIALS COMPOSITION); SCANNING ELECTRON MICROSCOPY; SPUTTERING; STOICHIOMETRY;

ION DOSE; NITRIDATION; SURFACE INCIDENCE ANGLE; SURFACE STOICHIOMETRY;

SILICON NITRIDE;

EID: 0030412533     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(96)00220-5     Document Type: Article

References (27)

1. Chang, J.J., IEEE Trans. Electron Devices, 1977, ED-24, 511.
2. Morosanu, C.E., Thin Solid Films, 1980, 65, 171.
3. Powell, M.J., Easton, B.C. and Hill, O.F., Appl. Phys. Lett., 1981, 38, 794.
4. Skorupa, W., Kreissig, U. and Oertal, H., Vacuum, 1986, 36, 933.
5. Bozso, F. and Avouris, Ph., Phys. Rev. Lett., 1986, 57, 1185.
6. Peden, C.H.F., Rogers, J.W. Jr., Shinn, N.D., Kidd, K.B. and Tsang, K.L., Phys. Rev., 1993, B47, 15622.
7. Park, K.H. and Kim, B.C., Kang, H., J. Chem. Phys., 1992, 97, 2742.
8. Hellman, O.C., Herbots, N., Vancauwenberghe, O., Culbertson, R.J. and Croft, W.J., J. Vac. Sci. Technol., 1992, A10, 1631.
9. Homma, Y. and Maruo, T., Surf. Interface Anal., 1989, 14, 725.
10. Littlewood, S.D. and Kilner, J.A., J. Appl. Phys., 1988, 63, 2175.
11. Inoue, S., Furumura, Y., Maeda M. and Takagi, M., in Silicon Nitride Thin Insulating Films, eds V. J. Kapoor and H. J. Stein. The Electrochemical Society, Incorporated, Pennington, N.J., USA 1983, p. 381.
12. Furumura, Y., Inoue, S., Maeda, M. and Takagi, M., in Silicon Nitride Thin Insulating Films, eds V. J. Kapoor and H. J. Stein. The Electrochemical Society, Incorporated, Pennington, N.J., USA, 1983, p. 391.
13. Markwitz, A., Baumann, H., Grill, W., Knop, A., Krimmel, E.E. and Bethge, K., Nucl. Instr. and Meth., 1994, B89, 362.
14. Seah, M.P., in Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, Chap. 5, eds D. Briggs and M. P. Seah. Wiley, New York, 1983.
15. De Coster, W.,-Brijs, B., Bender, H., Alay, J. and Vandervorst, W., Vacuum, 1994, 45, 389.
16. Baldwin, D.A., Shamir, N. and Rabalais, J.W., Surf. Sci., 1984, 141, 617.
17. Carter, G., Nobes, M.J., Cave, C. and Al-Qadi, N., Vacuum, 1993, 45, 71.
18. Carter, G., Nobes, M.J., Lewis, G.W., Whitton, J.L. and Kiriakides, G., Vacuum, 1984, 34, 167.
19. Grabowski, K.S., Kahn, A.D.F., Donovan, E.P. and Carosella, C.A., Nucl. Instr. and Meth., 1989, B39, 190.
20. Meekison, C.D., Booker, G.R., Reeson, K.J., Hemment, P.L.F., Chater, R.J., Kilner, J.A. and Davis, J.R., Vacuum, 1986, 36, 925.
21. Petruzzello, J., Mcgee, T.F., Frommer, M.H., Rumennik, V., Walters, P.A. and Chou, C.J., J. Appl. Phys., 1985, 58, 4605.
22. Chang, P.H., Slawinski, C., Mao, B.Y. and Lam, H.W., J. Appl. Phys., 1987, 61, 166.
23. Kijima, K. and Shiraski, S., J. Chem. Phys., 1976, 65, 2668.
24. Andersen, H.H. and Bay, H.L., in Topics in Applied Physics: Sputtering by Particle Bombardment I, Vol 47, ed, R Behrisch. Springer-Verlag Berlin, Heidelberg, 1981, p. 201.
25. Herbots, N., Hellman, O.C. and Vancauwebberghe, O., Mat. Res. Soc. Symp. Proc., 1992, 235, 769.
26. Menzel, N. and Wittmaack, K., Mater. Sci and Eng., 1992, B12, 91.
27. Reuter, W., Nucl. Instr. and Meth., 1986, B15, 173.