Low-noise amplifier for mobile communications using a production ready sige HBT technology

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 352-355

  Erben, U ^a   Schuppen, A ^b   Dietrich, H ^b   Schumacher, H ^a  

^a UNIVERSITY OF ULM   (Germany)

^b Temic TELEFUNKEN Microelectronic GmbH ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); LOW NOISE AMPLIFIERS; SILICON ALLOYS;

ASSOCIATED GAIN; BOND WIRE INDUCTANCE; INPUT AND OUTPUTS; MINIMUM NOISE FIGURE; MOBILE COMMUNICATIONS; SIGE-HBT TECHNOLOGY; SUPPLY VOLTAGES; THIRD-ORDER INPUT INTERCEPT POINTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 11744375111     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194438     Document Type: Conference Paper

References (5)

1. max", in Proceedings of the IEDM, 1995, pp. 743-746.
2. H. Schumacher and U. Erben, "Heterojunction bipolar transistors for noise-critical applications", in Proceedings of XVIIISOTAPOCS, Vol. 93-27, 1993, pp. 345-352.
3. H. Schumacher, U. Erben, and A. Gruhle, "Noise characterisation of Si/SiGe hereterojunction bipolar transistors at microwave frequencies", Electronic letters, vol. 28, no. 12, pp. 1167-1168, June 1992.
4. A. Schüppen, H. Dietrich, S. Gerlach, H. Köhnemann, J. Arndt, U. Seiler, R. Götzfried, U. Erben, and H. Schumacher, "SiGe-technology and components for mobile communication systems", in Proceedings of the BCTM, 1996, pp. 130-134.
5. D. Harame, L. Larson, M. Case, K. Kovacic, S. Voinigescu, T. Tewksbury, D. Nguyen-Ngoc, K. Stein, J. Cressler, S.-J. Jeng, J. Malinowski, R. Groves, E. Eld, D. Sunderland, D. Rensch, M. Gilbert, R. Schonenberg, D. Ahlgren, S Rosenbaum, J. Glenn, and Meyerson, "SiGe HBT technology: Device and application issues", in Proceedings of the IEDM, 1995, pp. 731-734.