Characterising and modelling thermal behaviour of radio-frequency power LDMOS transistors

Electronics Letters

Volumn 34, Issue 14, 1998, Pages 1428-1430

  Collantes, J M ^a   Bouysse, Ph ^b   Quere, R ^b  

^a UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^b UNIVERSITY OF LIMOGES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC LOSSES; HEAT RESISTANCE; SEMICONDUCTOR DEVICE MODELS;

LOAD PULL MEASUREMENTS;

MOSFET DEVICES;

EID: 0032120795     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980975     Document Type: Article

References (5)

1. CAMILLERI, N., COSTA, J., LOVELACE, D., and NGO, D.: 'Silicon MOSFETs, the microwave device technology for the 90s'. IEEE MTT-Symp. Dig., 1993, pp. 545-548
2. PRIJIC, Z., PAVLOVIC, Z., RISTIC, S., and STOJADINOVIC, N.: 'Zero-temperature-coefficient (ZTC) biasing of power VDMOS transistors', Electron. Lett., 1993, 29, (5), pp. 435-437
3. SCOTT, J., PARKER, A., RATHMELL, J., and SAYED, M.: 'New applications for pulsed/isothermal test systems'. ARFTG, San Francisco, CA, June 1996, pp. 70-75
4. ds characteristics from pulsed measurements in MESFET Transistors'. 23rd European Microwave Conf., September 1993, pp. 518-521
5. COLLANTES, J.M., RAOUX, J.J., VILLOTTE, J.P., QUERE, R., MONTORIOL, G., and DUPUIS, F.: 'A new large-signal model based on pulse measurements techniques for RF power MOSFET'. 1995 IEEE MTT-Symp. Dig., Orlando, June 1995, pp. 1553-1556