Microscopic analysis of current-induced domain conversion phenomena on Si(001) vicinal surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 7, 1998, Pages 4115-4123

  Ohmi, Hirokazu ^a   Ihara, Norihiro ^a   Wada, Koh ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Domain conversion; Electromigration; Path probability method; Schwoebel effect; Si(001)2 1; Step stability; Surface migration

Indexed keywords

CALCULATIONS; ELECTROMIGRATION; MONTE CARLO METHODS; SURFACE PROPERTIES; SURFACES;

SCHWOEBEL EFFECT; STEP STABILITY;

SEMICONDUCTING SILICON;

EID: 0032120070     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4115     Document Type: Article

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