Microscopic kinetic mechanism in current-induced conversion on Si(001) vicinal surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 226-233

  Ohmi, Hirokazu ^a   Uchida, Tetuya ^a,b   Wada, Koh ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Domain conversion; Electromigration; Path probability method; Schwoebel effect; Si(001)2 1; Surface migration

Indexed keywords

ANISOTROPY; ANNEALING; ATOMS; COMPUTER SIMULATION; ELECTROMIGRATION; EVAPORATION; INTEGRATION; KINETIC THEORY; MATHEMATICAL MODELS; MONTE CARLO METHODS; SILICON; STATISTICAL MECHANICS;

ANISOTROPIC MIGRATION; CURRENT INDUCED DOMAIN CONVERSION; KINETIC EQUATION; MICROSCOPIC MECHANISM; PATH PROBABILITY METHOD; SCHWOEBEL EFFECT; SURFACE ATOMS; VICINAL SURFACE;

SURFACE PHENOMENA;

EID: 0029733380     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.226     Document Type: Article

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