Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1627-1630

  Watanabe, Masahiro ^a   Saitoh, Wataru ^a   Aoki, Yuichi ^a   Nishiyama, Jun ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM COMPOUNDS; COBALT COMPOUNDS; CRYSTAL LATTICES; EVAPORATION; IONIZATION OF SOLIDS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SURFACE PROPERTIES;

ELECTRON BOMBARDMENT; QUANTUM EFFECT;

HETEROJUNCTIONS;

EID: 0032116558     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00083-5     Document Type: Article

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