Proposal and analysis of very short channel field effect transistor using vertical tunneling with new heterostructures on silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 9 PART A, 1996, Pages

  Saitoh, Wataru ^a   Yamazaki, Katsuyuki ^a   Asada, Masahiro ^a   Watanabe, Masahiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CoSi2 CdF2 CaF2 si; Field effect transistor; Metal insulator semiconductor heterostructure; Short channel device; Tunneling current

Indexed keywords

CRYSTAL LATTICES; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING SILICON;

CADMIUM FLUORIDE; COBALT SILICIDE; LATTICE MATCHING; TUNNELING CURRENT;

FIELD EFFECT TRANSISTORS;

EID: 0030232843     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1104     Document Type: Article

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