Electrical properties of Pb1-xSnxTe layers with 0≤x≤1 grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2405-2410

  Abramof, E ^a   Ferreira, S O ^a   Rappl, P H O ^a   Closs, H ^a   Bandeira, I N ^a  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001351225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366051     Document Type: Article

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