Cyclic voltammetric response of boron-doped homoepitaxially grown single crystal and polycrystalline CVD diamond

Sensors and Actuators, B: Chemical

Volumn 50, Issue 2, 1998, Pages 131-139

  Ramesham, R ^a,b,c  

^a AUBURN UNIVERSITY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Boron doped polycrystalline diamond; Boron doped single crystal diamond; Cyclic voltammetry; Ferri ferrocyanide; Microwave plasma

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; PERFORMANCE; POLYCRYSTALS; SINGLE CRYSTALS;

VOLTAMMETRY;

SYNTHETIC DIAMONDS;

EID: 0032108369     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(98)00214-7     Document Type: Article

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