Development of alkali-induced electronic states at GaAs(0 0 1) surfaces and their electron-transfer interaction with helium metastable atoms

Ultramicroscopy

Volumn 73, Issue 1-4, 1998, Pages 223-228

  Nishigaki, S ^a   Yamada, K ^b   Asanari, J ^a   Naitoh, M ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALKALI METALS; ATOMS; CHARGE TRANSFER; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; ELECTRONIC STRUCTURE; HELIUM; IONIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE TREATMENT;

AUGER DEEXCITATION PROCESS; AUGER NEUTRALIZATION; METASTABLE DEEXCITATION SPECTROSCOPY; RESONANCE IONIZATION;

ADSORPTION;

ALKALI METAL; HELIUM;

ADSORPTION; CONFERENCE PAPER; ELECTRON TRANSPORT; ENERGY TRANSFER; IONIZATION; MOLECULAR INTERACTION; SPECTROSCOPY;

EID: 0032102121     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(97)00160-5     Document Type: Conference Paper

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