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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 191-196

Vertical stacking of strained InGaAs/GaAs quantum wires by chemical beam epitaxy

(3) Kim, Sung Bock a Ro, Jeong Rae a Lee, El Hang a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

Chemical beam epitaxy; InGaAs GaAs; Quantum wire; Selective epitaxy; Stacked quantum wire

Indexed keywords

CHEMICAL BEAM EPITAXY; EXCITONS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE;

SELECTIVE EPITAXY; STACKED QUANTUM WIRES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032099132 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00048-7 Document Type: Article

Times cited : (2)

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