SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 356-361

Fabrication of InGaAs/GaAs quantum wires on a non-(111) V-grooved GaAs substrate by chemical beam epitaxy

(4) Kim, Sung Bock a Park, Seong Ju b Ro, Jeong Rae a Lee, El Hang a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; TEMPERATURE;

INDIUM GALLIUM ARSENIDE; LATERAL CONFINEMENT; TEMPERATURE DEPENDENT GROWTH; TRIETHYLGALLIUM; TRIMETHYLINDIUM; UNPRECRACKED MONOETHYLARSINE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030197145 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00027-9 Document Type: Article

Times cited : (2)

References (18)

1
- 0343853202
- K. Kash, A. Scherer, J.M. Worlock, H.G. Craighead and M.C. Tamargo, Appl. Phys. Lett. 49 (1986) 1043.
- (1986) Appl. Phys. Lett. , vol.49 , pp. 1043
- Kash, K.¹ Scherer, A.² Worlock, J.M.³ Craighead, H.G.⁴ Tamargo, M.C.⁵

2
- 0042535633
- B.I. Miller, A. Shahar, U. Koren and P.J. Corvini, Appl. Phys. Lett. 54 (1989) 188.
- (1989) Appl. Phys. Lett. , vol.54 , pp. 188
- Miller, B.I.¹ Shahar, A.² Koren, U.³ Corvini, P.J.⁴

3
- 0001044976
- J. Cibert, P.M. Petroff, G.J. Dolan, S.J. Pearton, A.C. Gossard and J.H. English, Appl. Phys. Lett. 49 (1986) 1275.
- (1986) Appl. Phys. Lett. , vol.49 , pp. 1275
- Cibert, J.¹ Petroff, P.M.² Dolan, G.J.³ Pearton, S.J.⁴ Gossard, A.C.⁵ English, J.H.⁶

4
- 18744400423
- H.A. Zarem, P.C. Sercel, M.E. Hoenk, J.A. Lebens and K.J. Vahala, Appl. Phys. Lett. 54 (1989) 269.
- (1989) Appl. Phys. Lett. , vol.54 , pp. 269
- Zarem, H.A.¹ Sercel, P.C.² Hoenk, M.E.³ Lebens, J.A.⁴ Vahala, K.J.⁵

5
- 0026852982
- E. Kapon, D.M. Hwang, M. Walther, R. Bhat and N.G. Stoffel, Surf. Sci. 267 (1992) 593.
- (1992) Surf. Sci. , vol.267 , pp. 593
- Kapon, E.¹ Hwang, D.M.² Walther, M.³ Bhat, R.⁴ Stoffel, N.G.⁵

6
- 0041391713
- T. Sugaya, M. Kaneko, Y. Okada and M. Kawabe, Jpn. J. Appl. Phys. 32 (1993) L1834.
- (1993) Jpn. J. Appl. Phys. , vol.32
- Sugaya, T.¹ Kaneko, M.² Okada, Y.³ Kawabe, M.⁴

7
- 36449009006
- N. Usami, T. Mine, S. Fukatsu and Y. Shiraki, Appl. Phys. Lett. 63 (1993) 2789.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2789
- Usami, N.¹ Mine, T.² Fukatsu, S.³ Shiraki, Y.⁴

8
- 0024103953
- R. Bhat, E. Kapon, D.M. Hwang, M.A. Koza and C.P. Yun, J. Crystal Growth 93 (1988) 850.
- (1988) J. Crystal Growth , vol.93 , pp. 850
- Bhat, R.¹ Kapon, E.² Hwang, D.M.³ Koza, M.A.⁴ Yun, C.P.⁵

9
- 0009601528
- H. Isshiki, Y. Aoyagi and T. Sugano, Appl. Phys. Lett. 63 (1993) 1528.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 1528
- Isshiki, H.¹ Aoyagi, Y.² Sugano, T.³

10
- 0027681212
- T. Arakawa, S. Tsukamoto, Y. Nagamune, M. Nishioka, J.H. Lee and Y. Arakawa, Jpn. J. Appl. Phys. 32 (1993) L1377.
- (1993) Jpn. J. Appl. Phys. , vol.32
- Arakawa, T.¹ Tsukamoto, S.² Nagamune, Y.³ Nishioka, M.⁴ Lee, J.H.⁵ Arakawa, Y.⁶

11
- 0027904869
- X.Q. Shen, M. Tanaka and T. Nishinaga, J. Crystal Growth 127 (1993) 932.
- (1993) J. Crystal Growth , vol.127 , pp. 932
- Shen, X.Q.¹ Tanaka, M.² Nishinaga, T.³

12
- 0028383647
- S.J. Park, J.R. Ro, J.K. Sim and E.H. Lee, J. Crystal Growth 136 (1994) 138.
- (1994) J. Crystal Growth , vol.136 , pp. 138
- Park, S.J.¹ Ro, J.R.² Sim, J.K.³ Lee, E.H.⁴

13
- 0029308937
- J.R. Ro, S.J. Park, S.B. Kim and E.H. Lee, J. Crystal Growth 150 (1995) 627.
- (1995) J. Crystal Growth , vol.150 , pp. 627
- Ro, J.R.¹ Park, S.J.² Kim, S.B.³ Lee, E.H.⁴

14
- 30244507904
- submitted
- S.B. Kim, S.J. Park, J.R. Ro and E.H. Lee, J. Crystal Growth (1995), submitted.
- (1995) J. Crystal Growth
- Kim, S.B.¹ Park, S.J.² Ro, J.R.³ Lee, E.H.⁴

15
- 36449007260
- M. Walther, E. Kapon, C. Caneau, D.M. Hwang and L.M. Schiavone, Appl. Phys. Lett. 62 (1993) 2170.
- (1993) Appl. Phys. Lett. , vol.62 , pp. 2170
- Walther, M.¹ Kapon, E.² Caneau, C.³ Hwang, D.M.⁴ Schiavone, L.M.⁵

16
- 30244547533
- M. Nishioka, S. Tsukamoto, Y. Nagamune, T. Tanaka and Y. Arakawa, J. Crystal Growth 124 (1992) 102.
- (1992) J. Crystal Growth , vol.124 , pp. 102
- Nishioka, M.¹ Tsukamoto, S.² Nagamune, Y.³ Tanaka, T.⁴ Arakawa, Y.⁵

17
- 21544450096
- M. Walther, E. Kapon, J. Christen, D.M. Hwang and R. Bhat, Appl. Phys. Lett. 60 (1992) 521.
- (1992) Appl. Phys. Lett. , vol.60 , pp. 521
- Walther, M.¹ Kapon, E.² Christen, J.³ Hwang, D.M.⁴ Bhat, R.⁵

18
- 0039045863
- M.S. Lee, Y. Kim, M.S. Kim, S.I. Kim, S.K. Min, Y.D. Kim and S. Nahm, Appl. Phys. Lett. 63 (1993) 3052.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 3052
- Lee, M.S.¹ Kim, Y.² Kim, M.S.³ Kim, S.I.⁴ Min, S.K.⁵ Kim, Y.D.⁶ Nahm, S.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.