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Volumn 38, Issue 5, 1991, Pages 1152-1161

Simple Analytical Expressions for the Fringing Field and Fringing-Field-Induced Transfer Time in Charge-Coupled Devices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS;

EID: 0026155687     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.78393     Document Type: Article
Times cited : (8)

References (10)
  • 1
    • 0015141554 scopus 로고
    • Drift-aiding fringing fields in charge-coupled devices
    • Oct.
    • J. E. Carnes, W. F. Kosonocky, and E. G. Ramberg, “Drift-aiding fringing fields in charge-coupled devices,” IEEE J, Solid-State Circuits, vol. SC-6, pp. 322–326, Oct. 1971.
    • (1971) IEEE J, Solid-State Circuits , vol.SC-6 , pp. 322-326
    • Carnes, J.E.1    Kosonocky, W.F.2    Ramberg, E.G.3
  • 3
    • 0016025910 scopus 로고
    • Calculations on potential and charge distributions in the peristaltic charge-coupled device
    • M. G. Collet and A. C. Vliegenthart, “Calculations on potential and charge distributions in the peristaltic charge-coupled device,” Philips Res. Repts., vol. 29, pp. 25–44, 1974.
    • (1974) Philips Res. Repts , vol.29 , pp. 25-44
    • Collet, M.G.1    Vliegenthart, A.C.2
  • 4
    • 0016473426 scopus 로고
    • Field and potential distributions in charge transfer devices
    • H. W. Hanneman and L. J. M. Esser, “Field and potential distributions in charge transfer devices,” Philips Res. Repts., vol. 30, pp. 56–72, 1975.
    • (1975) Philips Res. Repts , vol.30 , pp. 56-72
    • Hanneman, H.W.1    Esser, L.J.M.2
  • 5
    • 0019543658 scopus 로고
    • A new method for the two dimensional calculation of the potential distribution in a buried-channel charge-coupled device: Theory and experimental verification
    • Mar.
    • K. M. de Meyer and G. J. Declerck, “A new method for the two dimensional calculation of the potential distribution in a buried-channel charge-coupled device:Theory and experimental verification,” IEEE Trans. Electron Devices, vol. ED-28, no. 3, pp. 313–321, Mar. 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , Issue.3 , pp. 313-321
    • de Meyer, K.M.1    Declerck, G.J.2
  • 6
    • 0015617233 scopus 로고
    • MIS array potential calculations
    • W. H. Chang, “MIS array potential calculations,” Solid-State Electron., vol. 16, pp. 491–496, 1973.
    • (1973) Solid-State Electron , vol.16 , pp. 491-496
    • Chang, W.H.1
  • 7
    • 0016437850 scopus 로고
    • Imaging devices using the charge-coupled concept
    • D. F. Barbe, “Imaging devices using the charge-coupled concept,” Proc. IEEE, vol. 63, pp. 38–67, 1975.
    • (1975) Proc. IEEE , vol.63 , pp. 38-67
    • Barbe, D.F.1
  • 8
    • 0020885338 scopus 로고
    • Analytical model and characterization of small geometry buried-channel depletion MOSFET's
    • Dec.
    • T. Yamaguchi and S. Moritomo, “Analytical model and characterization of small geometry buried-channel depletion MOSFET's,” IEEE J. Solid-State Circuits, vol. SC-18, no. 6, pp. 784–793, Dec. 1983.
    • (1983) IEEE J. Solid-State Circuits , vol.SC-18 , Issue.6 , pp. 784-793
    • Yamaguchi, T.1    Moritomo, S.2
  • 9
    • 0042435499 scopus 로고
    • An analytical model for the invers narrow-gate effect of a metal-oxide-semiconductor field-effect transistor
    • Mar.
    • K. M. Hong and Y. C. Cheng, “An analytical model for the invers narrow-gate effect of a metal-oxide-semiconductor field-effect transistor,” J. Appl. Phys., vol. 61, no. 6, pp. 1387–2392, Mar.1987.
    • (1987) J. Appl. Phys , vol.61 , Issue.6 , pp. 1387-2392
    • Hong, K.M.1    Cheng, Y.C.2
  • 10
    • 0025205755 scopus 로고
    • Experimental investigation of the transverse electric field in charge coupled devices
    • C. C. Sun and J. M. Xu, “Experimental investigation of the transverse electric field in charge coupled devices,” Opt. Quantum Electron., vol. 22, pp. 55–63, 1990.
    • (1990) Opt. Quantum Electron , vol.22 , pp. 55-63
    • Sun, C.C.1    Xu, J.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.