Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells by insertion of monolayer AlP for electron localization

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 323-327

  Sugita, T ^a   Usami, N ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; MONOLAYERS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

GALLIUM PHOSPHIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032097664     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00097-9     Document Type: Article

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