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Applied Physics Letters

Volumn 69, Issue 26, 1996, Pages 3972-3974

Influence of disorder on luminescence from pseudorandomized strained Si1-xGex/Si superlattices

(3) Miyake, Y a Shiraki, Y b Fukatsu, S a

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); ELECTRIC FIELDS; ELECTRONS; ENERGY GAP; EXCITONS; GERMANIUM; IONIZATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON COMPOUNDS;

CARRIER LOCALIZATION; DISORDER; HOLE WAVE FUNCTIONS; PSEUDORANDOMIZATION;

SUPERLATTICES;

EID: 0030413310 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.117984 Document Type: Article

Times cited : (5)

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