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Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 321-326

Effects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxy

(5) Muto, A a Okada, M a Ikeda, H a Zaima, S a Yasuda, Y a

a NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; DESORPTION; FILM GROWTH; GAS ADSORPTION; HETEROJUNCTIONS; HYDROGEN; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE TREATMENT;

SOLID PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0032097021 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00078-6 Document Type: Article

Times cited : (4)

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