Novel method of strain-relaxed Si1-xGex growth on Si(100) by MBE

Applied Surface Science

Volumn 100-101, Issue , 1996, Pages 487-490

  Iwano, H ^a   Yoshikawa, K ^a   Kojima, A ^a   Hayashi, K ^a   Zaima, S ^a   Yasuda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Electronic materials and processing; Epitaxy; Growth mechanism

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; GERMANIUM; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; STRESS RELAXATION; SUBSTRATES; THICKNESS MEASUREMENT;

ATOMIC MIXING; GROWTH MECHANISM; ISLAND GROWTH; STRAIN RELAXATION; TWO STEP GROWTH METHOD;

SEMICONDUCTOR GROWTH;

EID: 0030564366     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00324-8     Document Type: Article

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