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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 137-143

Dynamical approach to the surface reaction of triisobutylgallium (TIBGa) on GaAs(0 0 1) by using molecular beam scattering

(3) Cui, Jie a Ozeki, Masashi a Ohashi, Masafumi a

a NATL INST FOR ADV INTERDISC RES (Japan)

Author keywords

Desorption; Precursor mediated adsorption; Scattering; Semiconductor surface; Supersonic molecular beam; Triisobutylgallium (TIBGa)

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; DECOMPOSITION; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PHENOMENA;

MOLECULAR PHYSISORPTION; SUPERSONIC MOLECULAR BEAM SCATTERING; TRIISOBUTYLGALLIUM;

SEMICONDUCTOR GROWTH;

EID: 0032096918 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00058-X Document Type: Article

Times cited : (6)

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