A molecular beam study of the adsorption of tertiarybutylarsine (TBAs) on As-rich GaAs (001) surfaces

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 739-745

  Cui, Jie ^a   Ozeki, Masashi ^a   Ohashi, Masafumi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Direct inelastic scattering; GaAs; Precursor mediated adsorption; Semiconductor surface; Supersonic molecular beam; TBAs

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CHEMISORPTION; MOLECULAR BEAMS; SCATTERING; SURFACE PROPERTIES;

TERTIARYBUTYLARSINE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031548423     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80175-4     Document Type: Article

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