Synchrotron radiation multiple diffraction study of Al0.304Ga0.172In0.524 As MOVPE grown onto InP(001)

Journal of Crystal Growth

Volumn 172, Issue 3-4, 1997, Pages 284-290

  Sasaki, J M ^a,f   Cardoso, L P ^b,c   Campos, C ^b,c   Roberts, K J ^a,d   Clark, G F ^d   Pantos, E ^d   Sacilotti, M A ^e  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^d DARESBURY LABORATORY   (United Kingdom)

^e UNIVERSITÉ DE BOURGOGNE   (France)

^f FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

Hetero epitaxial growth; III V compounds; MOVPE; Synchrotron radiation multiple diffraction

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYSTAL LATTICES; ELECTRON DIFFRACTION; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SYNCHROTRON RADIATION;

ALUMINUM GALLIUM INDIUM ARSENIDE; DARESBURY SYNCHROTRON RADIATION; RENNINGER SCANNING GEOMETRY; SYNCHROTRON RADIATION MULTIPLE DIFFRACTION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031103154     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00763-4     Document Type: Article

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15. exp|).