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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 211-219

Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy

(3) Joyce, T B a Farrell, T a Davidson, B R b

a UNIVERSITY OF LIVERPOOL (United Kingdom)

b IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

Carbon doping of GaAs; Chemical beam epitaxy; Optical monitoring; Surface studies of GaAs

Indexed keywords

CARBON; CHEMICAL BEAM EPITAXY; CHEMICAL BONDS; ELECTROOPTICAL EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

ARSINE; CARBON TETRABROMIDE; METALLORGANIC MOLECULAR BEAM EPITAXY; REFLECTANCE ANISOTROPY SPECTROSCOPY; SURFACE RECONSTRUCTION; TRIMETHYLGALLIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032095156 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00051-7 Document Type: Article

Times cited : (7)

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