Photoelectron diffraction study on the epitaxial growth of SrF 2 on Ge(111)-c(2 × 8)

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 67-71

  Omori, S ^a   Ishii, H ^a   Nihei, Y ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Epitaxy; Germanium; Halides; Semiconductor insulator interfaces; X ray photoelectron diffraction

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; ELECTRON EMISSION; ELECTRON SCATTERING; EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING GERMANIUM; STRONTIUM COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE; X RAY CRYSTALLOGRAPHY;

STRONTIUM FLUORIDE; X RAY PHOTOELECTRON DIFFRACTION (XPED) ANALYSIS;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 0032094778     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00026-9     Document Type: Article

References (10)

1. T. Asano, H. Ishiwara, N. Kaifu, Jpn. J. Appl. Phys. 22 (1983) 1474.
2. M.A. Olmstead, R.I.G. Uhrberg, R.D. Bringans, R.Z. Bachrach, Phys. Rev. B 35 (1987) 7526.
3. R.M. Tromp, M.C. Reuter, Phys. Rev. Lett. 61 (1988) 1756.
4. S. Omori, H. Ishii, Y. Nihei, Surf. Sci. 381 (1997) 165.
5. J.J. Rehr, R.C. Albers, Phys. Rev. B 41 (1990) 8139.
6. S. Omori, H. Ishii, Y. Nihei, Appl. Surf. Sci. 121/122 (1997) 241.
7. Y. Ichinohe, H. Ishii, M. Owari, Y. Nihei, J. Vac. Sci. Technol. A 13 (1995) 1489.
8. H.C. Poon, S.Y. Tong, Phys. Rev. B 30 (1984) 6211.
9. J.D. Denlinger, E. Rotenberg, U. Hessinger, M. Leskovar, M.A. Olmstead, Appl. Phys. Lett. 62 (1993) 2057.
10. U. Bardi, M. Torrini, Y. Ichinohe, S. Omori, H. Ishii, M. Owari, Y. Nihei, Surf. Sci. 394 (1997) L150.