Photoelectron diffraction for the sulfur interlayer between CaF 2 epitaxial layers and sulfur-passivated InP(100)

Applied Surface Science

Volumn 121-122, Issue , 1997, Pages 241-244

  Omori, S ^a   Ishii, H ^a   Nihei, Y ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Epitaxy; Halides; Indium phosphide; Photoelectron diffraction; Semiconductor insulator interfaces; Sulfur passivation

Indexed keywords

CALCIUM COMPOUNDS; EPITAXIAL GROWTH; PASSIVATION; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SULFUR; X RAY DIFFRACTION ANALYSIS;

CALCIUM FLUORIDE; X RAY PHOTOELECTRON DIFFRACTION;

INTERFACES (MATERIALS);

EID: 0031549675     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00297-3     Document Type: Article

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