Observation of silicon surfaces using ultrahigh vacuum noncontact atomic force microscope

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 SUPPL. B, 1998, Pages 3765-3768

  Kitamura, Shin'ichi ^a   Suzuki, Katsuyuki ^a   Iwatsuki, Masashi ^a  

^a JEOL LTD   (Japan)

Author keywords

AFM; CPD; FM detection; Force gradient; Noncontact; Si(100)2 1; Si(111)7 7; SKPM; STM

Indexed keywords

ADSORPTION; DEPOSITION; ELECTRIC POTENTIAL; ELECTROSTATICS; FREQUENCY MODULATION; GOLD; OXYGEN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE TOPOGRAPHY; VACUUM APPLICATIONS;

CONTACT POTENTIAL DIFFERENCE; ULTRAHIGH VACUUM NONCONTACT ATOMIC FORCE MICROSCOPY; ULTRAHIGH VACUUM SCANNING KELVIN PROBE MICROSCOPY;

ATOMIC FORCE MICROSCOPY;

EID: 0032094453     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3765     Document Type: Article

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