Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 808-811

  Osiński, Marek ^a   Barton, Daniel L ^a,b   Perlin, Piotr ^a,c,d   Lee, Jinhyun ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Degradation; Device lifetime; Diode lasers; Electrical stress; Gallium nitride; Light emitting diodes

Indexed keywords

DEGRADATION; ELECTRON ENERGY LEVELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; STRESS ANALYSIS;

HIGH ELECTRICAL STRESS TESTING; SINGLE QUANTUM WELL LIGHT EMITTING DIODES (SQW LED);

LIGHT EMITTING DIODES;

EID: 0032093833     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00299-1     Document Type: Article

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