GaN quantum dots in AlxGa1-xN confined layer structures

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 135-140

  Tanaka, S ^a   Hirayama, H ^a   Iwai, S ^a   Aoyagi, Y ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NANOSTRUCTURED MATERIALS; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS;

GALLIUM NITRIDE; NANOSCALE QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030672578     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)