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1
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3242743823
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Multi-gigabit-per-second optical transmission systems
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WC1-1, June
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HAGIMOTO, K., KOBAYASHI, Y., and YAMABAYASHI, Y.: 'Multi-gigabit-per-second optical transmission systems'. Tech. Dig. on IOOC'95, WC1-1, June 1995
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(1995)
Tech. Dig. on IOOC'95
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Hagimoto, K.1
Kobayashi, Y.2
Yamabayashi, Y.3
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2
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0002219002
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Lightwave-communication ICs for 10 Gbit/s and beyond
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TUI1
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SANO, E., IMAI, Y., and ICHINO, H.: 'Lightwave-communication ICs for 10 Gbit/s and beyond'. Tech. Dig. on OFC'95, TUI1, 1995
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(1995)
Tech. Dig. on OFC'95
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Sano, E.1
Imai, Y.2
Ichino, H.3
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3
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0030405059
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A super-dynamic flip-flop circuit for broadband applications up to 24Gbit/ s utilizing production-level 0.2mm GaAs MESFET
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E.6
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OTSUJI, T., YONEYAMA, M., MURATA, K., SANO, E., and : 'A super-dynamic flip-flop circuit for broadband applications up to 24Gbit/ s utilizing production-level 0.2mm GaAs MESFET'. Tech. Dig. on GaAs IC Symp., E.6, 1996
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(1996)
Tech. Dig. on GaAs IC Symp.
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Otsuji, T.1
Yoneyama, M.2
Murata, K.3
Sano, E.4
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4
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0031200104
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46Gb/s super-dynamic type decision circuit module using InAlAs/InGaAs HEMTs
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YONEYAMA, M., OTSUJI, T., IMAI, Y., YAMAGUCHI, S., ENOKI, T., UMEDA, Y., and HAGIMOTO, K.: '46Gb/s super-dynamic type decision circuit module using InAlAs/InGaAs HEMTs', Electron. Lett., 1997, 33, (17), pp. 1472-1474
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Electron. Lett.
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Yoneyama, M.1
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Yamaguchi, S.4
Enoki, T.5
Umeda, Y.6
Hagimoto, K.7
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5
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0031200699
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A 64Gbit/s 2:1 multiplexer IC using InAlAs/InGaAs/InP HEMTs
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OTSUJI, T., YONEYAMA, M., IMAI, Y., ENOKI, T., and UMEDA, Y.: 'A 64Gbit/s 2:1 multiplexer IC using InAlAs/InGaAs/InP HEMTs', Electron. Lett., 1997, 33, (17), pp. 1488-1489
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Otsuji, T.1
Yoneyama, M.2
Imai, Y.3
Enoki, T.4
Umeda, Y.5
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6
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0029217064
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0.1 μm InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD
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Hokkaido, Japan, WB2.4
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ENOKI, T., ITOH, H., IKUTA, K., and ISHII, Y.: '0.1 μm InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD'. Tech. Dig. on Int. Conf. Indium Phosphide and Rel. Mater. Conf. Proc., Hokkaido, Japan, 1995, WB2.4
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Tech. Dig. on Int. Conf. Indium Phosphide and Rel. Mater. Conf. Proc.
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Enoki, T.1
Itoh, H.2
Ikuta, K.3
Ishii, Y.4
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7
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3142552867
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Active mode-locked strained InGaAsP lasers integrated with electroabsorption modulators fot 20Gbit/s pulse generation
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TuI2
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SATO, K., KOTAKA, L. KONDO, Y., and YAMAMOTO, M.: 'Active mode-locked strained InGaAsP lasers integrated with electroabsorption modulators fot 20Gbit/s pulse generation'. Tech. Dig. OFC'95, TuI2, 1995
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(1995)
Tech. Dig. OFC'95
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Sato, K.1
Kotaka, L.2
Kondo, Y.3
Yamamoto, M.4
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9
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0343478133
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40 Gbit/s baseband-type optical receiver module using a waveguide photodetector and a GaAs MESFET distributed amplifier IC
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19A1-2
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TSUDA, K., MIYAMOTO, Y., SANO, A, KATO, K., IMAI, Y., and HAGIMOTO, K.: '40 Gbit/s baseband-type optical receiver module using a waveguide photodetector and a GaAs MESFET distributed amplifier IC'. Tech. Dig. on OECC'96, 19A1-2, 1996
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(1996)
Tech. Dig. on OECC'96
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Tsuda, K.1
Miyamoto, Y.2
Sano, A.3
Kato, K.4
Imai, Y.5
Hagimoto, K.6
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