Weakly localized transport in modulation-doped GaN/AlGaN heterostructures

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 758-762

  Buyanov, A V ^a   Sandberg, J A ^a   Sernelius, B E ^a   Holtz, P O ^a   Bergman, J P ^a   Monemar, B ^a   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

Defects; Disorder; Heterostructures; Localization; Transport

Indexed keywords

CONDUCTIVE MATERIALS; CRYSTAL DEFECTS; HALL EFFECT; INTERFACES (MATERIALS); MAGNETORESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES;

MODULATION DOPED HETEROSTRUCTURES; WEAKLY LOCALIZED TRANSPORT;

HETEROJUNCTIONS;

EID: 0032091584     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00283-8     Document Type: Article

References (12)

1. A.M. Kreshchuk, S.V. Novikov, I.G. Savel'ev, Sov. Phys. Semicond. 26 (1992) 771.
2. A.M. Kreshchuk, S.V. Novikov, T.A. Polyanskaya, I.G. Savel'ev, A.Ya. Shik, J. Crystal Growth 146 (1995) 153.
3. W. Walukiewicz, L. Wang, L.M. Pawlowicz, J. Lagowski, H.C. Gatos, J. Appl. Phys. 59 (9) (1986) 3144.
4. W. Walukiewicz, P.F. Hopkins, M. Sundaram, A.C. Gossard, Phys. Rev. B 44 (1991) 10909.
5. D.C. Look, C.E. Stutz, C.A. Bozada, J. Appl. Phys. 74 (1993) 311.
6. R.L. Peritz, Phys. Rev. 110 (1958) 1254.
7. W. Walukiewicz, L. Hsu, J.M. Redwing, Mater. Res. Soc. Symp. Proc., Vol. 449, 1996, p. 573.
8. W.J. Beenakker, H. van Houten, in: Solid State Physics, Advances in Research and Applications, vol. 44, Academic, San Diego, 1991.
9. E. Abrahams, P.W. Anderson, D.C. Licciardello, T.V. Ramakrishnan, Phys. Rev. Lett. 42 (1979) 673.
10. P.M. Mensz, R.G. Wheeler, Phys. Rev. B 35 (1987) 2844.
11. W. Szott, C. Jedrzekjek, W.P. Kirk, Phys. Rev. B 48 (1993) 8963.
12. A.V. Buyanov, J.A. Sandberg, B.E. Sernelius, P.O. Holtz, J.P. Bergman, B. Monemar, H. Amano, I. Akasaki, unpublished.