Quantum mechanical description of p-type Si/Si1 - x Gex quantum well MOSFET in silicon-on-insulator technology

Solid-State Electronics

Volumn 41, Issue 5, 1997, Pages 729-732

  Fu, Y ^a   Patel, C J ^b   Willander, M ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b MIDDLESEX UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTERFACES (MATERIALS); QUANTUM THEORY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

POISSON EQUATION; SCHRODINGER EQUATION;

MOSFET DEVICES;

EID: 0031143957     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00259-6     Document Type: Article

References (12)

1. Colinge, J. P., Subthreshold slope of thin-film SOI MOSFET's. IEEE Electron Device Letters, 1986, EDL-7, 244.
2. Nayak, D. K., Woo, J. C. S., Park J. S., Wang, K. L. and MacWilliams, K. P., Hole confinement in a Si/GeSi/Si quantum well on SIMOX. IEEE Transactions of Electron Devices, 1996, 43, 180.
3. Kuo, J. B., Tang, M. C. and Sim, J. H., Modelling the effect of back gate bias on the subthreshold behaviour of SiGe-channel SOI PMOS device. Solid-State Electronics, 1993, 36, 1757.
4. Kuo, J. B., Tang, M.-C. and Sim, J.-H., An analytical back gate bias dependent threshold voltage model for SiGe-channel ultrathin SOI PMOS devices. IEEE Transactions of Electronic Devices, 1993, 40, 2237.
5. Niu, G. F., Ruan, G. and Tang, T. A., Inversion charge modelling of SiGe PMOS and approaches to increasing the hole density in the SiGe channel. Solid-State Electronics, 1995, 38, 323.
6. Fu, Y. and Willander, M., Subband structure and ionized impurity scattering of the two-dimensional electron gas in δ-doped field effect transistor. Journal of Applied Physics, 1995, 78, 3504.
7. x alloy. Physics Review B15.
8. Dresselhaus, G., Kip, A. F. and Kittel, C., Cyclotron resonance of electrons and holes in silicon and germanium crystals. Physics Review, 1955, 98, 368.
9. Tiersten, M., Acoustic-mode scattering of holes. IBM Journal of Research Devices, 1961, 5, 122.
10. Pikus, G. E. and Bir, G. L., Effect of deformation on the hole energy spectrum of germanium and silicon. Soviet Physics-Solid State, 1959, 1, 1502.
11. Van de Walle, C. G., SiGe heterojunctions and band offsets. Properties of Strained and Relaxed Silicon Germanium, ed. E. Kasper (emis data reviews series), No. 12, p. 110.
12. ATLAS User's Manual, device simulation software. SILVACO International, 1995, pp. 11-15.