Design of a K-band power amplifier using on-wafer-tuning load-pull method

IEICE Transactions on Electronics

Volumn E81-C, Issue 6, 1998, Pages 882-885

  Ida, Minoru ^a   Nakatsugawa, Masashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

HEMT; Load pull measurement; MMIC; On wafer; Power amplifier

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC NETWORK SYNTHESIS; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SILICON WAFERS; SUBSTRATES; TUNING;

POWER ADDED EFFICIENCY (PAE);

POWER AMPLIFIERS;

EID: 0032090471     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)

1. B.C.Schmukler, "Coplanar on-wafer matching structures tunable by RF-probe position," IEEE MTT-S Digest, pp. 1481-1484, 1994.
2. H.Yoshinaga, Y.Kashiwabara, B.Abe, and K.Shibata, "A technique for deriving noise-parameters of millimeter-wave lownoise HEMTs and its application to MMIC LNA design," IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig.,pp.I49-152, 1996.