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Volumn 410, Issue 1, 1998, Pages 46-53

Characterisation of low-pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; GAMMA RAYS; PROTONS; RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; VAPOR PHASE EPITAXY;

EID: 0032089958     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00141-7     Document Type: Article
Times cited : (3)

References (7)
  • 1
    • 0042718522 scopus 로고    scopus 로고
    • ATLAS Collaboration, ATLAS Technical Proposal for a General-Purpose pp Experiment at the Large Hadron Collider at CERN, CERN, LHCC 94-43, 1994
    • ATLAS Collaboration, ATLAS Technical Proposal for a General-Purpose pp Experiment at the Large Hadron Collider at CERN, CERN, LHCC 94-43, 1994.
  • 5
    • 0042718515 scopus 로고    scopus 로고
    • Ph.D. Thesis, Dept. of Physics, University of Glasgow, June
    • R. Bates, Ph.D. Thesis, Dept. of Physics, University of Glasgow, June 1997.
    • (1997)
    • Bates, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.