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Volumn 410, Issue 1, 1998, Pages 46-53
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Characterisation of low-pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE MEASUREMENT;
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC SPACE CHARGE;
GAMMA RAYS;
PROTONS;
RADIATION EFFECTS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE TESTING;
VAPOR PHASE EPITAXY;
SEMICONDUCTOR DETECTORS;
PARTICLE DETECTORS;
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EID: 0032089958
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-9002(98)00141-7 Document Type: Article |
Times cited : (3)
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References (7)
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