Growth of high purity GaAs using low-pressure vapor-phase epitaxy

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 395, Issue 1, 1997, Pages 125-128

  Adams, R L ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; HIGH ENERGY PHYSICS; PARTICLE DETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

HIGH PURITY GALLIUM ARSENIDE; LOW PRESSURE VAPOR PHASE EPITAXY (LPVPE);

SEMICONDUCTING FILMS;

EID: 0031210049     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00624-4     Document Type: Article

References (0)