Investigation of the intrinsic SiO2area dependence using TDDB testing and model integration into the design process

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1121-1125

  Prendergast, James ^a   Foley, Nigel ^a   Suehle, John S ^b  

^a ANALOG DEVICES   (Ireland)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; FAILURE ANALYSIS; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; SILICA; THERMAL EFFECTS; THIN FILMS;

TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TESTING;

SEMICONDUCTING FILMS;

EID: 0032083901     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00140-1     Document Type: Article

References (8)

1. On The Breakdown Of Very Thin SiO2 Films by Sune et al., Thin Solid Films, 185 (1990) Pgs. 347-362.
2. Tutorial On Chip Reliability by El-Kareh and Tonti, IRPS 1997 Tutorial Session 1.
3. Tutorial On Dielectric Breakdown by Degraeve, IRPS 1997 Session 7.
4. 2 by Suehle et al., IRPS 94, Pg 120.
5. 2 Films with Bimodal Failure Populations by Prendergast et al., IRPS 95 Pg 124.
6. Acceleration Factors for Thin Gate Oxide Stressing J. W. McPherson and D. A. Baglee, Proc. Int. Rel. Physics Symp., Vol. 23, p.1, 1985.
7. 2 Area Dependency Using TDDB Testing by Prendergast et al. IRW 1997, Pg 22
8. The Non-Uniqueness of Breakdown Distributions in Silicon Oxides by Jackson et al., IRW 1997, Pg. 50