Investigation of the intrinsic SiO2 area dependence using TDDB testing

International Integrated Reliability Workshop Final Report

Volumn , Issue , 1997, Pages 22-25

  Prendergast, James ^a   Finucane, Nuala ^a   Suehle, John ^a  

^a Raheen Industrial Estate   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; MATHEMATICAL MODELS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STATISTICAL METHODS; THIN FILMS;

FAILURE STATISTICS; THERMAL ACTIVATION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

INTEGRATED CIRCUIT TESTING;

EID: 0031344334     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)