The use of the Focused Ion Beam in failure analysis

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 869-876

  Verkleij, D ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; ION BEAMS;

FOCUSED ION BEAMS (FIB);

SEMICONDUCTOR DEVICE TESTING;

EID: 0032083714     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00126-7     Document Type: Article

References (4)

1. Olson T.K., Lee R.G. and Morgan J.C. Contrast mechanisms in focused ion beam imaging. Proc. ISTFA 1992, pp 373-382.
2. th international conference on secondary mass spectrometry pp 517 - 520.
3. Nikawa K. Applications of focused ion beam technique to failure analysis of very large scale integration: A review. J. Vac. Sci. Technol. B 9 (5) (1991) 2566 - 2577
4. Pantel R., Auvert G., Mascarin G. Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections. Microelectronic Engineering 37/38 (1997) pp 49 -57.