Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 49-57

  Pantel, Roland ^a   Auvert, Geoffroy ^a   Mascarin, Guy ^a  

^a ORANGE LABS   (France)

Author keywords

Electron energy loss spectroscopy; Focused ion beam; Metal interconnection; Semiconductor technology; Transmission electron microscopy

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON ENERGY LOSS SPECTROSCOPY; ETCHING; INTERCONNECTION NETWORKS; ION BEAMS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAMS; METAL INTERCONNECTIONS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031274833     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00093-2     Document Type: Article

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