A new method for temperature mapping on GaAs field effect transistors

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1245-1250

  Martin, E ^a   Landesman, J P ^a   Braun, P ^b   Fily, A ^a  

^a THALES   (France)

^b U Monolithic Semiconductors GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LASER BEAMS; MICROPROCESSOR CHIPS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; THERMOANALYSIS;

SPATIALLY RESOLVED PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

FIELD EFFECT TRANSISTORS;

EID: 0032083672     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00095-X     Document Type: Article

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