Local channel temperature measurements on pseudomorphic high electron mobility transistors by photoluminescence spectroscopy

Applied Physics Letters

Volumn 72, Issue 11, 1998, Pages 1338-1340

  Landesman, J P ^a   Depret, B ^a   Fily, A ^a   Nagle, J ^a   Braun, P ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HEAT RESISTANCE; LASER BEAMS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR SUPERLATTICES; SPECTROSCOPY; TEMPERATURE MEASUREMENT;

CHANNEL TEMPERATURE; GATE SOURCE; GRAIN DRAIN; PHOTOLUMINESCENCE SPECTROSCOPY; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032027073     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120987     Document Type: Article

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