Electronic and atomic structures of Si-C-N thin film by X-ray-absorption spectroscopy

Journal of Electron Spectroscopy and Related Phenomena

Volumn 92, Issue 1-3, 1998, Pages 115-118

  Pong, W F ^a   Chang, Y K ^a   Hsieh, H H ^a   Tsai, M H ^b   Lee, K H ^a   Dann, T E ^c   Chien, F Z ^a   Tseng, P K ^a   Tsang, K L ^c   Su, W K ^d   Chen, L C ^e   Wei, S L ^e   Chen, K H ^f   Bhusari, D M ^f   Chen, Y F ^e  

^a TAMKANG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^e NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^f INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

Core exciton; Extended X ray absorption fine structure (EXAFS); Hybridized states; first principles calculations; Thin film; X ray absorption near edge structure (XANES)

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; SILICON COMPOUNDS; THIN FILMS;

CORE EXCITON; EXTENDED X RAY ABSORPTION FINE STRUCTURE; HYBRIDIZED STATES; X RAY ABSORPTION NEAR EDGE STRUCTURE;

X RAY SPECTROSCOPY;

EID: 0032073367     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0368-2048(98)00111-x     Document Type: Article

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