Improved capping layers for suppression of ambient ageing in porous silicon

Journal of Physics D: Applied Physics

Volumn 31, Issue 10, 1998, Pages 1131-1136

  Giaddui, T ^a   Earwaker, L G ^a   Forcey, K S ^a   Loni, A ^b   Canham, L T ^b  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^b DRA   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARBON; HYDROGEN; ION BEAMS; MORPHOLOGY; OXIDATION; OXYGEN; POROSITY; POROUS SILICON; SPUTTERING; SURFACES;

ALUMINUM SURFACE CAPPING LAYER; ATMOSPHERIC OXIDATION; ION BEAM AGEING; POROUS SILICON LAYER;

AGING OF MATERIALS;

EID: 0032073336     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/10/001     Document Type: Article

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