Excimer laser etching of GaAs, Al x Ga 1-x As and CuInSe 2 in chlorine atmosphere

Applied Surface Science

Volumn 127-129, Issue , 1998, Pages 800-804

  Zimmer, K ^a   Dienelt, J ^a   Herfurth, F ^a   Braun, A ^a   Otte, K ^a   Lippold, G ^b   Gottschalch, V ^b   Bigl, F ^a  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Al x Ga 1 x As; Chlorine; CuInSe 2; Laser processing; Laser induced etching; Raman scattering

Indexed keywords

CHLORINE; COMPOSITION EFFECTS; CRYSTAL DEFECTS; EXCIMER LASERS; LASER BEAM EFFECTS; RAMAN SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STOICHIOMETRY; SURFACE PROPERTIES; SURFACE ROUGHNESS;

LASER INDUCED ETCHING (LIE);

ETCHING;

EID: 0032069451     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00745-9     Document Type: Article

References (12)

1. F. Foulon, M. Green, F.N. Goodall, S. de Unamuno, J. Appl. Phys. 71 (1992) 2898.
2. T. Senga, Y. Matsumi, M. Kawasaki, J. Vac. Sci. Technol. B 14 (1996) 3230.
3. J.H. Ha, E.A. Ogryzlo, S. Polyhronopoulos, J. Chem. Phys. 89 (1988) 2844.
4. M. Ishii, T. Meguro, K. Gamo, T. Sugano, Y. Aoyagi, Jpn. J. Appl. Phys. 32 (1993) 6178.
5. V. Liberman, G. Haase, R.M. Osgood, J. Chem. Phys. 96 (1992) 1590.
6. M.R. Berman, Appl. Phys. A 53 (1991) 442.
7. P. Tejedor, P.S. Domínguez, Microelectron. J. 26 (1995) 853.
8. F. Foulon, M. Green, J. Vac. Sci. Technol. B 11 (1993) 1854.
9. F. Foulon, M. Green, Appl. Phys. A 60 (1995) 377.
10. M.A. Green, K. Emery, K. Bucher, D.L. King, Prog. Photovoltaics Res. Appl. 3 (1995) 229.
11. G. Lippold, M.V. Yakushev, R.D. Tomlininson, A.E. Hill, W. Grill, Cryst. Res. Technol. 31 (1996) 381.
12. M.V. Yakushev, G. Lippold, A.E. Hill, R.D. Pilkington, R.D. Tomlinson, J. Mater. Sci. Mater. Electron. 7 (1996) 155.