Silicide formation at palladium surfaces. Part II: Amorphous silicide growth at the Pd(100) surface

Surface Science

Volumn 406, Issue 1-3, 1998, Pages 117-124

  Kampshoff, Elisabeth ^a   Wälchli, Nicolas ^a   Kern, Klaus ^a  

^a EPFL   (Switzerland)

Author keywords

Growth; Infrared absorption spectroscopy; Metal semiconductor interfaces; Palladium; Scanning tunneling microscopy; silicon

Indexed keywords

ABSORPTION SPECTROSCOPY; ADSORPTION; AMORPHOUS MATERIALS; CARBON MONOXIDE; CHEMISORPTION; INFRARED SPECTROSCOPY; MORPHOLOGY; PALLADIUM; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SILICON; SURFACE STRUCTURE;

REFLECTION ABSORPTION INFRARED SPECTROSCOPY (RAIRS); SILICIDES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032069440     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00100-9     Document Type: Article

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