Silicide growth at metal surfaces: Competition between subsurface diffusion and chemical reaction

Surface Science

Volumn 382, Issue 1-3, 1997, Pages

  Wälchli, Nicolas ^a   Kampshoff, Elisabeth ^a   Menck, Alexander ^a   Kern, Klaus ^a  

^a EPFL   (Switzerland)

Author keywords

Growth; Infrared absorption spectroscopy; Metal semiconductor interfaces; Palladium; Scanning tunneling microscopy; Silicon

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; CARBON MONOXIDE; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); GAS ADSORPTION; INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; PALLADIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR METAL BOUNDARIES; THERMAL EFFECTS;

SILICIDE; SUBSURFACE DIFFUSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031165497     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00137-4     Document Type: Article

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